| PART |
Description |
Maker |
| FAN1086D-2.85 FAN1086S-3.3 FAN1086S-2.5 FAN1086M-2 |
Neuron ICs; Max. Input Clock: 20 MHz; EEPROM: 2 KB; RAM: 2 KB; ROM: 16 KB; Package: 32 pin SOP; External Memory I/F: No
; Sensitivity dBµmV: 93 ~ 107; Package: SSOP16; Production Status: MP
FETs Nch 30VFETs Nch 30VPhase Lock Loop; Dual or Single: Single; Features: Integer - N; Power Supply V: 2.4 ~ 3.5; ImA: 4.8; Input FMHz: 700 ~ 1800; Operating Freq-MHz: 5 ~ 25; Sensitivity dBµmV: 92 ~ 107; Package: SSOP10; Production Status: MP
FETs Nch 30VFETs Nch 30VFETs Nch 30VMOSFETs - Nch VDSS=30V; Surface Mount Type: Y; Package: TSSOP-8; Number Of Pins: 8; R DS On (Ω): (max 0.018) (max 0.013) (max 0.012); I_S (A): (max 6)
FETs Nch 30VFETs Nch 30VFETs Nch 30VFETs Nch 30VTHREE-TERMINAL POSITIVE FIXED VOLTAGE REGULATORS
积极的固定电压稳压器
FETs Nch 30V<VDSS=60V; ; Package: TO-3P(N); R DS On (O): (max 0.055) (max 0.03); I_S (A): (max 45)
FETs Nch 30V<VDSS=60V; Surface Mount Type: N; Package: TO-220NIS; R DS On (O): (max 0.025) (max 0.017); I_S (A): (max 45)
|
|
| RJK0658DPA-00-J5A RJK0658DPA13 |
60V, 25A, 11.1m max. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| MIT-5A117 |
ISOLATOR, FLUSH 25A 3 POLEISOLATOR, FLUSH 25A 3 POLE; Poles, No. of:3; Current rating:25A; Approval Bodies:UL, CSA; IP rating:IP55; Power, switching AC3 max:2.2kW; Switch function type:Triple Pole 开槽光电断路器
SLOTTED PHOTOINTERRUPTER
|
Unity Opto Technology Co., Ltd.
|
| RJK1053DPB-15 RJK1053DPB-13 |
100V, 25A, 13m?max Silicon N Channel Power MOS FET Power Switching
100V, 25A, 13m max Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK0655DPB RJK0655DPB-00-J5 RJK0655DPB-15 |
60V, 35A, 6.7m max. Silicon N Channel Power MOS FET Power Switching
60V, 35A, 6.7m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| SGC2550S-15 |
Surface Mount Schottky Rectifier Reverse Voltage 50~60V Forward Current 25A
|
GOOD-ARK Electronics
|
| 2N682 2N681 2N691 |
25A silicon controlled rectifier. Vrsom 75V.
25A silicon controlled rectifier. Vrsom 35V.
25A silicon controlled rectifier. Vrsom 840V.
|
General Electric Solid State
|
| HD06 HD04 HD01 HD02 |
0.8A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
Triac; Package/Case:TO-48; Current, It av:40A; Mounting Type:Through Hole; Repetitive Reverse Voltage Max, Vrrm:200V; Current Rating:40A; Voltage
TRIAC,200V V(DRM),25A I(T)RMS,TO-220
TRIAC-600VRM-25A-TO220
|
DIODES[Diodes Incorporated]
Diodes Inc.
|
| 0923162014 |
Picoflex PF-50 IDT-Board In, 20 Circuits, 0.14m (5.51) Length
|
Molex Electronics Ltd.
|
| 25RIA160 25RIA80S90 25RIA 25RIA10 25RIA100 25RIA10 |
800V 25A Phase Control SCR in a TO-208AA (TO-48) package
1400V 40A Phase Control SCR in a TO-208AA (TO-48) package
1200V 25A Phase Control SCR in a TO-208AA (TO-48) package
1000V 25A Phase Control SCR in a TO-208AA (TO-48) package
100V 25A Phase Control SCR in a TO-208AA (TO-48) package
600V 25A Phase Control SCR in a TO-208AA (TO-48) package
400V 25A Phase Control SCR in a TO-208AA (TO-48) package
16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
MEDIUM POWER THYRISTORS 中功率晶闸管
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
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